*** FEATURES: Automatic identification of components automatic identification of connection pins identification of special features such as detection of protective diodes and detection of bipolar shunt transistors resistors: measurement of current gain and leakage current, silicon diode detection and germanium detection of threshold voltage for enriched MOSFET direct voltage measurement for diodes, LED and base-transmitter junctions. Transistors automatic and manual switch-off. Specifications: Summary specification at 20°C (68°F) unless otherwise specified short circuit peak current: -5.5 mA up to 5.5 mA peak current permanent short circuit voltage: -5.1 V up to 5.1 V transmitter: gain range (HFE): 4 – 65,000 gain accuracy: ± 3% ± 5 Hfe maximum collector-to-transmitter voltage. (VCEO): 2.0 V – 3.0 V VBE-based voltage accuracy: -2% -20 mV up to +2% + 20 mV VBE base-transmitter voltage for Darlington transistor (shunted): 0.95 V – 1.80 V (0.75 V – 1.80 V) Shunt resistance threshold: 50 kΩ – 70 kΩ collector current BJT: 2.45 mA – 2.55 mA. Acceptable leak current BJT: 0.7 mA MOSFET: Grill voltage range: 0.1 V – 5.0 V threshold accuracy: -2% -20 mV up to +2% + 20 mV drain current: 2.45 mA – 255 mA. Grill resistance: 8 kΩ drain current: 4.5 mA current drain-source JFET: 0.5 mA – 5.5 mA thyristor/Triac: Grill current: 4.5 mA holding current: 5.0 mA diode: test current: 5.0 mA voltage accuracy: -2% -20 mV up to +2% + 20 mV direct voltage for LED identification: 1.50 V – 4.00 V short circuit threshold: 10 Ω battery: type: MN21 / L1028 / GP23A 12 V alkaline voltage range: 7.50 V – 12 V alarm threshold: 8.25 V dimensions: 103 x 70 x 20 mm (4.1″ x 2.8″ x 0.8″) Weight per product (nett): 0.098 kg (100g), working temperature: 0°C ~ 50°C (32F ~ 122F).
